DatasheetsPDF.com

MJD243

Part Number	MJD243
Manufacturer	Motorola
Description	NPN SILICON POWER TRANSISTOR
Published	May 7, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Pre...
Datasheet	MJD243 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Preferred Device DPAK For Surface Mount Applications .
.
.
designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.
0 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc = 0.
...

Similar Datasheet

MJD20 P-channel power MOSFET - Sanken
MJD200 NPN Transistor - INCHANGE
MJD200 Complementary Plastic Power Transistors - ON
MJD200 D-PAK - Fairchild
MJD200 SILICON POWER TRANSISTORS - Motorola
MJD210 Silicon PNP Power Transistor - Inchange Semiconductor
MJD210 PNP Transistor - Fairchild
MJD210 Complementary Plastic Power Transistors - ON
MJD210 SILICON POWER TRANSISTORS - Motorola
MJD210 PNP Transistor - UTC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)