MJD200

MJD200 MJD200 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value 40 25 8 1 5 10 12.5 1.4 150 - 55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCBO(sus) ICEO ICBO IEBO hFE VCE (sat) Parameter * Collector Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Min. 25 Max. 100 100 Units V nA nA VBE (sat) VBE (on) fT Cob * Base-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairch...