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MJD127T4

Complementary power Darlington transistors

Description

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting trans...

ST Microelectronics

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