TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production...
TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power
transistors
Datasheet - production data
Features
Low collector-emitter saturation voltage Complementary
NPN -
PNP transistors
Applications
General purpose Audio amplifier
Description
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.
Order code 2N3055 MJ2955
Table 1. Device summary
Marking
Package
2N3055 MJ2955
TO-3
Packaging Tray
November 2013
This is information on a product in full production.
DocID4079 Rev 8
1/7
www.st.com
Absolute maximum rating
1 Absolute maximum rating
2N3055, MJ2955
Table 2. Absolute maximum rating
Symbol
Parameter
VCBO VCER VCEO VEBO
IC IB PTOT
Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Base current Total dissipation at Tc ≤ 25°C Storage temperature
Max. operating junction temperature
NPN PNP
Value 2N3055 MJ2955
100 70 60 7 15 7 115 -65 to 200 200
Unit
V V V V A A W °C °C
Note:
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max
For
PNP type voltage and current values are negative
Value 1.5
Unit °C/W
2/7 DocID4079 Rev 8
2N3055, MJ2955
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Symbol
Table 4. Electrical characteristics
Paramet...