MJ15001 Datasheet

MJ15001 Complementary Silicon Power Transistors

MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gai.

Features

• High Safe Operating Area
• For Low Distortion Complementary Designs
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB IE PD 140 Vdc 140 Vdc 5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.14 W/°C Operating and Storage Junction Temperature Range TJ, Tstg
  –65 to +200 °C Stresses exceeding Maximum Ratings .