DatasheetsPDF.com

7MBR50SA-060 Dataheets PDF



Part Number 7MBR50SA-060
Manufacturers Fuji Electric
Logo Fuji Electric
Description Power Integrated Module (PIM)
Datasheet 7MBR50SA-060 Datasheet7MBR50SA-060 Datasheet (PDF)

7MBR 50SA-060 Power Integrated Module (PIM) n Features • PT-Technology • Solderable Package • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching IGBT PIM 600V 6x50A+Chopper n Outline Drawing n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Inverter Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current.

  7MBR50SA-060   7MBR50SA-060



Document
7MBR 50SA-060 Power Integrated Module (PIM) n Features • PT-Technology • Solderable Package • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching IGBT PIM 600V 6x50A+Chopper n Outline Drawing n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Inverter Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) 2 It (Non Repetitive) Collector-Emitter Voltage Gate –Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque* Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM IO IFSM VCES VGES IC IC PULSE PC VRRM Tj TStg VISO Test Conditions Ratings 600 ± 20 50 100 50 200 800 50 350 613 600 ± 20 30 60 120 600 +150 -40 ∼ +125 2500 3.5 Units V A W V A As V A W V °C V Nm 2 Continuous 1ms 1 device 50Hz/60Hz sinus wave Tj=150°C, 10 ms, sinus wave Brake Chopper Rectifier Continuous 1ms 1 device A.C. 1min. Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) 7MBR 50SA-060 n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage IGBT PIM 600V 6x50A+Chopper Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr,x tr,i toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr,x toff tf IRRM R B Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V Chip IC = 50A Terminal f=1MHz, VGE=0V, VCE=10V VCC = 300V IC = 50A VGE = ±15V RG = 51Ω Inductive Load IF=50A IF=50A IF=50A Chip Terminal Chip Terminal Min. Typ. Max. Units 1.0 200 8.5 2.40 pF 1.2 0.6 1.0 0.35 µs mA nA V 5.5 Input Capacitance Turn-on Time Turn-off Time 7.8 1.8 1.95 5000 0.45 0.25 0.08 0.40 0.05 1.75 1.9 1.1 1.2 FRD Inverter IGBT Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current 2.6 300 1.5 1.0 1.0 200 2.4 1.2 0.6 1.0 0.35 1.0 520 3450 V ns V mA mA nA Rectifier Resistance B Value VR =800V VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V Chip IC=30A Terminal VCC = 300V IC = 30A VGE = ±15V RG = 82Ω VR=600V T= 25°C T=100°C T=25 / 50°C Brake Chopper 1.80 1.95 0.45 0.25 0.40 0.05 5000 495 3375 mA Ω K NTC 465 3305 n Thermal Characteristics Items Thermal Resistance (1 device) Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT Rectifier Diode With Thermal Compound Min. Typ. Max. Units 0.63 1.33 1.04 °C/W 2.42 0.05 Contact Thermal Resistance 7MBR 50SA-060 IGBT PIM 600V 6x50A+Chopper 7MBR 50SA-060 IGBT PIM 600V 6x50A+Chopper 7MBR 50SA-060 IGBT PIM 600V 6x50A+Chopper 7MBR 50SA-060 IGBT PIM 600V 6x50A+Chopper .


7MBR50NF060 7MBR50SA-060 7MBR50SA060


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)