Document
M74HC107
DUAL J-K FLIP FLOP WITH CLEAR
s HIGH SPEED :
fMAX = 80MHz (TYP.) at VCC = 6V
s LOW POWER DISSIPATION:
ICC =2µA(MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
)VNIH = VNIL = 28 % VCC (MIN.) t(ss SYMMETRICAL OUTPUT IMPEDANCE: c|IOH| = IOL = 4mA (MIN) us BALANCED PROPAGATION DELAYS: dtPLH ≅ tPHL ros WIDE OPERATING VOLTAGE RANGE: PVCC (OPR) = 2V to 6V
s PIN AND FUNCTION COMPATIBLE WITH
te74 SERIES 107 oleDESCRIPTION bsThe M74HC107 is an high speed CMOS DUAL
J-K FLIP FLOP fabricated with silicon gate
OC2MOS technology. These flip-flop are edge -sensitive to the clock input and change state on t(s)the negative going transition of the clock pulse.
Each one has independent J, K, CLOCK, and
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
TUBE
DIP SOP TSSOP
M74HC107B1R M74HC107M1R
T&R
M74HC107RM13TR M74HC107TTR
CLEAR input and Q and Q outputs. CLEAR is independent of the clock and accomplished by a logic low on the input. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
Obsolete ProducPIN CONNECTION AND IEC LOGIC SYMBOLS
August 2001
1/11
M74HC107
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL NAME AND FUNCTION
1, 8, 4, 11
1J, 2J, 1K, Synchronous Inputs; 2K Flip-Flop 1 And 2
2, 6
1Q, 2Q
Complement Flip-Flop Outputs
3, 5 1Q, 2Q True Flip-Flop Outputs
12, 9
1CK, 2CK Clock Input
13, 10
1CLR, 2CLR
Asynchronous Reset Inputs
7 GND Ground (0V)
t(s)TRUTH TABLE
roducCLR PL teH leH soH bH OH ) -X : Don’t Care
INPUTS JK XX LL LH HL HH XX
Obsolete Product(sLOGIC DIAGRAM
14 Vcc Positive Supply Voltage
OUTPUTS
CK Q
Q
XLH Qn Qn
LH
HL Qn Qn Qn Qn
FUNCTION
CLEAR NO CHANGE
------TOGGLE NO CHANGE
2/11
M74HC107
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7
V
VI DC Input Voltage
-0.5 to VCC + 0.5
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20
mA
IOK DC Output Diode Current
± 20
mA
IO DC Output Current
± 25
mA
ICC or IGND DC VCC or Ground Current
± 50
mA
PD Power Dissipation
500(*)
mW
)Tstg Storage Temperature
-65 to +150
°C
t(sTL Lead Temperature (10 sec)
300 °C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
cnot implied u(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
rodRECOMMENDED OPERATING CONDITIONS
PSymbol leteVCC oVI sVO bTop Obsolete Product(s) - Otr, tf
Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time
Parameter
VCC = 2.0V VCC = 4.5V VCC = 6.0V
Value
2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400
Unit
V V V °C ns ns ns
3/11
M74HC107
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VCC (V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
VIH High Level Input Voltage
2.0 4.5
1.5 1.5 1.5
3.15
3.15
3.15
V
6.0 4.2 4.2 4.2
VIL Low Level Input Voltage
2.0 4.5
0.5 0.5 0.5
1.35
1.35
1.35 V
6.0 1.8 1.8 1.8
)VOH High Level Output 2.0
IO=-20 µA
1.9 2.0
1.9
1.9
t(sVoltage
4.5 IO=-20 µA 4.4 4.5 4.4 4.4
c6.0 IO=-20 µA 5.9 6.0 5.9 5.9
V
u4.5
IO=-4.0 mA
4.18 4.31
4.13
4.10
d6.0
IO=-5.2 mA
5.68 5.8
5.63
5.60
roVOL Low Level Output PVoltage
2.0 4.5
IO=20 µA IO=20 µA
0.0 0.1 0.1 0.1 0.0 0.1 0.1 0.1
te6.0 IO=20 µA
0.0 0.1 0.1 0.1 V
le4.5 IO=4.0 mA
0.17 0.26
0.33
0.40
so6.0 IO=5.2 mA
0.18 0.26
0.33
0.40
bII Input Leakage OCurrent
6.0 VI = VCC or GND
± 0.1
±1
± 1 µA
Obsolete Product(s) -ICC
Quiescent Supply Current
6.0 VI = VCC or GND
2 20 40 µA
4/11
M74HC107
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Value
Symbol
Parameter
VCC (V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
tTLH tTHL Output Transition Time
2.0 4.5
30 75 8 15
95 110 19 22 ns
6.0 7 13 16 19
tPLH tPHL Propagation Delay Time (CK - Q, Q)
2.0 4.5
48 125 155 190 14 25 31 38 ns
)tPLH tPHL Propagation Delay Time (CLR - Q, Q)
uct(sfMAX Maximum Clock Frequency
ProdtW(H)
tW(L)
Minimum Pulse Width (CLOCK)
letetW(L) Minimum Pulse oWidth (CLR)
Obsts Minimum Set-up -Time
t(s)th Minimum Hold Time
roductREM Minimum Removal PTime (CLR)
6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0
leteCAPACITIVE CHARACTERISTICS
ObsoSymbol
Parameter
Test Condition VCC
12 21 26 32
52 140 175 210
15 28 35 42 ns
13 24 30 36
6.2 23
5.0 4.2
31 70 25 21 MHz
37 80 30 25
20 75
95 110
5 15 19 22 ns
4 13 16 19
20 75
95 110
5 15 19 22 ns
4 13 16 19
28 75
95 110
7 15 19 22 ns
6 13 16 19
000
0 0 0 ns
000
25 30 40
5 6 8 ns
557
TA = 25°C
Value -40 to 85°C -55 to 125°C Unit
(V) Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
5 10 10 10 pF
CPD Power Dissipation Capacitance (note 5.0
1)
32
pF
1) CPD is defined as the value of the IC’s interna.