MX043

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50 mΩ Features Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with ultrafast body diode low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G) very low thermal resistance reverse polarity available upon request add suffix “R”st Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44 132 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ Watts ° C ° C Amps Amps ° C/W grams VDSmax 200V 200V 160V 100V 40V Drain-to-Gate Breakdown Voltage @ TJ ≥ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 25° C, RGS= 1 MΩ Tj= 25° C Tj= 100° C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repe...