M36WT864

M36WT864TF M36WT864BF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDDF = 1.65V to 2.2V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s s s s s s s SRAM 8 Mbit (512K x 16 bit) EQUAL CYCLE and ACCESS TIMES: 70ns LOW STANDBY CURRENT LOW VDDS DATA RETENTION: 1.5V TRI-STATE COMMON I/O AUTOMATIC POWER DOWN ACCESS TIME: 70, 85, 100ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36WT864TF: 8810h – Bottom Device Code, M36WT864BF: 8811h Figure 1. Packages s FLASH MEMORY PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options FBGA s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) Stacked LFBGA96 (ZA) 8 x 14mm s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK July 2002 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/92 M36...