M36W416TG

M36W416TG M36W416BG 16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY s MULTIPLE MEMORY PRODUCT – 16 Mbit (1Mb x 16) Boot Block Flash Memory – 4 Mbit (256Kb x 16) SRAM s SUPPLY VOLTAGE – VDDF = VDDS = 2.7V to 3.3V – VDDQF = VDDS = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s SRAM s 4 Mbit (256Kb x 16) s s s ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36W416TG: 88CEh – Bottom Device Code, M36W416BG: 88CFh Figure 1. Packages FBGA FLASH MEMORY s MEMORY BLOCKS – Parameter Blocks (Top or Bottom location) – Main Blocks s Stacked LFBGA66 (ZA) 12 x 8mm PROGRAMMING TIME – 10µs typical – Double Word Programming Option s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WPF for Block Lock-Down s s s AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK COMMON FLASH INTERFACE – 64 bit Security Code SECURITY – 64 bit user programmable OTP cells – 64 bit unique device identifier – One parameter block permanently lockable s s November 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/62 M36W416TG, M36W416BG TABLE OF CONTENTS SUMMARY DESCRIPTION . . ....