16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product
M36W216TI M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
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Description
M36W216TI M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY s MULTIPLE MEMORY PRODUCT – 16 Mbit (1Mb x 16) Boot Block Flash Memory – 2 Mbit (128Kb x 16) SRAM s SUPPLY VOLTAGE – VDDF = VDDS = 2.7V to 3.3V – VDDQF = VDDS = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional)
s s s
SRAM s 2 Mbit (128K x 16 bit)
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ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36W216TI: 88CEh – Bottom Device Code, M36W216BI: 88CFh
Figure 1. Packages
FBGA
FLASH MEMORY s MEMORY BLOCKS – Parameter Blocks (Top or Bottom location) – Main Blocks
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Stacked LFBGA66 (ZA) 12 x 8mm
PROGRAMMING TIME – 10µs typical – Double Word Programming Option
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BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WPF for Block Lock-Down
s s s
AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK COMMON FLASH INTERFACE – 64 bit Security Code SECURITY – 64 bit user programmable OTP cells – 64 bit unique device identifier – One parameter block permanently lockable
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November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M36W216TI, M36W216BI
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