SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6439/D
The RF Line
NPN Silicon RF Power Transistor
. . . design...
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6439/D
The RF Line
NPN Silicon RF Power
Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz Built–In Matching Network for Broadband Operation Using Double Match Technique 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications
2N6439
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 –65 to +200 Unit Vdc Vdc Vdc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.2 Unit °C/W
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 — — — — — — — — 2.0 Vdc Vdc Vdc ...
