M2V28S30ATP

128M Synchronous DRAM Nov. '99 M2V28S20ATP -6,-6L,-7,-7L,-8,-8L M2V28S30ATP -6,-6L,-7,-7L,-8,-8L MITSUBISHI LSIs M2V28S40ATP -6,-6L,-7,-7L,-8,-8L SDRAM (Rev. 1.0E) (4-BANK x 8,388,608-WORD x 4-BIT) (4-BANK x 4,194,304-WORD x 8-BIT) (4-BANK x 2,097,152-WORD x 16-BIT) PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40ATP is organized as 4-bank x 2,097,152-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. M2V28S20ATP,M2V28S30ATP,M2V28S40ATP achieves very high speed data rates up to 133MHz, and is suitable for main memory or graphic memory in computer systems. FEATURES M2V28S20/30/40ATP ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time Row to Column Delay Access Time from CLK Ref/Active Command Period Operation Current (Max.) (Single Bank) (Max.) (Min.) (Min.) (Min.) (Max.) (CL=3) (Min.) V28S20 V28S30 V28S40 Icc6 Self Refresh Current -6 7.5ns 45ns 20ns 5.4ns 67.5ns 100mA 110mA 130mA 2mA -7 10ns 50ns 20ns 6ns 70ns 95mA 100mA 120mA 2mA -8 10ns 50ns 20ns 6ns 70ns 95mA 100mA 120mA 2mA Active to Precharge Command Period - Single 3.3V ±0.3V power supply - Max. Clock frequency -6:PC133<3-3-3> / -7:PC100<2-2-2> / -8:PC100<3-2-2> - Fully synchronous operation referenced to clock rising edge - 4-bank operation con...