M29W640DB

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option s 135 MEMORY BLOCKS – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location) – 127 Main Blocks, 64 KBytes each TSOP48 (N) 12 x 20mm s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend FBGA s TFBGA63 (ZA) 63 ball array s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VPP/WP Pin for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64-bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information s s s s s LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W640DT: 22DEh – Bottom Device Code M29W640DB: 22DFh s s April 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/50 M29W640DT, M29W640DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....