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M29W512B Dataheets PDF



Part Number M29W512B
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
Datasheet M29W512B DatasheetM29W512B Datasheet (PDF)

M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic S.

  M29W512B   M29W512B



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M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 27h VCC s s s Figure 1. Logic Diagram s 16 A0-A15 W E G M29W512B 8 DQ0-DQ7 VSS AI02743 March 2000 1/18 M29W512B Figure 2. TSOP Connections Figure 3. PLCC Connections A11 A9 A8 A13 A14 NC W VCC NC NC A15 A12 A7 A6 A5 A4 A12 A15 NC NC VCC W NC 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29W512B 25 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI02755 1 32 8 9 M29W512B 25 24 16 17 AI02976 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 Table 1. Signal Names A0-A15 DQ0-DQ7 E G W VCC VSS NC Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Supply Voltage Ground Not Connected Internally SUMMARY DESCRIPTION The M29W512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP32 (8 x 14mm) and PLCC32 packages and it is supplied with all the bits erased (set to ’1’). 2/18 M29W512B Table 2. Absolute Maximum Ratings (1) Symbol TA TBIAS TSTG VIO (2) VCC VID Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Identification Voltage Value 0 to 70 –50 to 125 –65 to 150 –0.6 to 4 –0.6 to 4 –0.6 to 13.5 Unit °C °C °C V V V Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of thi.


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