Document
Surface-mount Power Transistor Array SDA04
Absolute Maximum Ratings (Ta=25ºC)
Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings –60 –60 –6 –6 (pulse –12) –1 2.5 (No Fin) 150 –55 to +150 Unit V V V A A W ºC ºC
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = –60V VEB = –6V IC = –25mA VCE = –4V, IC = –2A IC = –2A, IB = –0.1A Ratings –10max –10max –60min 100min –0.4max
(Ta=25ºC) Unit µA µA V V
External Dimensions SMD-16A
1.0± 0.3
0.25
0.89± 0.15 0.75 –0.05
+0.15
2.54± 0.25
16 9.8± 0.3 6.8max 3.0± 0.2 6.3± 0.2 8.0± 0.5
9
a b
Pin 1 20.0max
± 0.2
Typical Switching Characteristics
VCC (V) 12 RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22
0 to 0.15
+0.15 0.3 –0.05
8
19.56
4.0max
1.4± 0.2
3.6± 0.2
a) Type No. b) Lot No. (Unit: mm)
s IC — VCE Characteristics
6 5 4
–200mA –100mA –50mA –30mA
s VCE (sat) — IC Temperature Characteristics (typ.)
3
IC / IB = 20
s IC — VBE Temperature Characteristics (typ.)
6 5
(VCE = –4V)
VCE (sat) (V)
2
IC (A)
3 2 1 0
–20mA
IC (A)
Ta = 150ºC 75ºC 25ºC –55ºC
4 3 2 1
Ta = 150ºC 75ºC 25ºC –55ºC
–10mA IB = –5mA
1
0
1
2
3
4
5
0 –0.05
–0.1
–1
–10
0
0
0.5
1.0
1.5
VCE (V)
IC (A)
VBE (V)
s hFE — IC Temperature Characteristics
1000
VCE = –4V
s ton• tstg• t f — IC Characteristics
5
s
ton
j-a — t
Characteristics
50
Ta = 25ºC Single pulse
j-a (ºC/W)
500
ton • tstg • tf (µsec)
1 0.5
hFE
VCC = 12V IB1 = – IB2 = 50mA
10 5
tf
100 50 30 –0.01 –0.1
Ta = 150ºC 75ºC 25ºC –55ºC
0.1 0.05 0.5 0.1 0.5 1
tstg
5 10
1 0.3 0.001
–1
–10
0.01
0.1
1
2
IC (A)
IC (A)
t (s)
s Safe Operating Area (single pulse)
–20 –10
10 m
s PT — Ta Derating
4
Equivalent Circuit Diagram
s 1m
3
s
Without heatsink
IC (A)
s
PT (W)
20
16
10
m
2
–1 –0.5
15
9
1
natural air cooling Without heatsink
2
8
–0.1 –3
–5
–10
–50
–100
0
0
50
100
150
VCE (V)
Ta (ºC)
69
.