Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load s...
