MCR25D

MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS High Surge Current Capability — 300 Amperes Rugged, Economical TO–220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C Device Marking: Logo, Device Type, e.g., MCR25D, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 25 300 A A TO–220AB CASE 221A STYLE 3 1 2 Value Unit Volts 4 http://onsemi.com SCRs 25 AMPERES RMS 400 thru 800 VOLTS G A K 3 I2t PGM PG(AV) IGM TJ Tstg 373 20.0 0.5 2.0 – 40...