MCR225FP

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR225FP/D Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Insulated Package Simplifies Mounting MCR225FP Series ISOLATED SCRs 25 AMPERES RMS 50 thru 800 VOLTS G A K CASE 221C-02 STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = –40 to +125°C, Gate Open) MCR225-2FP MCR225-4FP MCR225-6FP MCR225-8FP MCR225-10FP On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM 50 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 25 300 375 20 0.5 2 1500 –40 to +125 –40 to +125 Amps Amps A2s Watts Watt Amps Volts °C °C ...