Document
MCR100-3 … MCR100-8
G A K
TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS (TJ=25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 (TJ=25 to 125°C, RGK=1KΩ) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, TA=25°C (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms) Peak Gate Power - Forward, TA=25°C Average Gate Power - Forward, TA=25°C Peak Gate Current - Forward, TA=25°C (300µs,120PPS) Peak Gate Voltage - Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range IT(RMS) ITSM It PGM PGF(AV) IGFM VGRM TJ Ts
2
Symbol
Value 100
Unit
VDRM and VRRM
200 300 400 500 600 0.8 10 0.415 0.1 0.01 1 5 -40 to +125 -40 to +150 Amps Amps As Watts Watt Amp Volts °C °C
2
Volts
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK=Rated VDRM or VRRM) Forward “On” Voltage (ITM=1A Peak @TA=25°C) Gate Trigger Current(Continuous dc),Note 1 (Anode Voltage=7Vdc,RL=100 Ohms) Gate Trigger Voltage(Continuous dc) (Anode Voltage=7Vdc,RL=100 Ohms) (Anode Voltage=Rated VDRM,RL=100 Ohms) Holding Current (Anode Voltage=7Vdc,initiating current=20mA) Note 1. RGK current is not included in measurement. IH 5 mA VGT 0.8 Volts IGT 200 µA VTM Symbol IDRM,IRRM 10 1.7 µA Volts Min Max Unit
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
100
Gate Trigger Current (µA)
90 80 70 60 50 40 30 20 10 -40 -25 -10 5 20 35 50 65 80 95 110
Gate Trigger Voltage (volts)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110
TJ, Junction Temperature (〜 C) Figure 1. Typical Gate Trigger Curent Versus Junction Temperature
1000 1000
TJ, Junction Temperature (〜 C) Figure 2. Typical Gate Trigger Voltage Versus Junction Temperature
Holding Current (µA)
Latching Current (µA)
100
100
10
-40 -25
-10
5
20
35
50
65
80
95
110
10
-40 -25
-10
5
20
35
50
65
80
95
110
TJ, Junction Temperature (〜 C) Figure 3. Typical Holding Curent Versus Junction Temperature TC, Maximum Allowable Case Temperature (〜 C)
120
TJ, Junction Temperature (〜 C) Figure 4. Typical Latching Curent Versus Junction Temperature
10
IT,Instantaneous On-State Current (AMPS)
110 100 90 80 70 60 50 40 0 0.1 30〜 C 0.2 60〜 C 0.3 90〜 C 0.4 0.5 180〜 C DC
MAXIMUM @ TJ=25〜 C MAXIMUM @ TJ=110〜 C
1
0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
IT(RMS), RMS On-State Current (AMPS) Figure 5. Typical RMS Current Derating
VT, Instantaneous On-State Voltage (volts) Figure 6.