MCR100-3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR100/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C Low Holding Current — 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity MCR100 Series* *Motorola preferred devices SCRs 0.8 AMPERE RMS 100 thru 600 VOLTS G A K K G A CASE 29-04 (TO-226AA) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125°C, RGK = 1 kΩ MCR100-3 MCR100-4 MCR100-6 MCR100-8 Forward Current RMS (See Figures 1 & 2) (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Average Gate Power — Forward, TA = 25°C Peak Gate Current — Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Lead Solder Temperature ( 1/16I from case, 10 s max) Symbol VDRM and VRRM Value 100 200 ...