MCL4154

MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Micro Melf package 96 12315 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 35 25 2 450 200 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C tp=1ms VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy–glass hard tissue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit K/W Document Number 85568 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) MCL4154 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery y time Test Conditions IF=30mA VR=25V VR=25V, Tj=150°C IR=5mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100W Type Symbol VF IR IR V(BR) CD trr trr Min Typ Max 1 100 100 4 4 2 Unit V nA mA V pF ns ns 35 Characteristics (Tj = 25_C unless otherwise specified) 0.71 1.3 1.27 95 10331 Wave Soldering 0.152 1.4 9.9 25 0.355 0.7 1.4 2.8 10 0.7 Figure 3. Recommended foot pads (in mm) 2.5 100 I R ...