Document
Ordering number : ENN7042
MCH6610
N-Channel Silicon MOSFET
MCH6610
Ultrahigh-Speed Switching Applications
Preliminary Features
• • • •
Package Dimensions
Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
0.25 2.1 1.6
[MCH6610]
0.3 0.15
4
5
6
0.25
3 2 0.65
2.0
0.07
1
6
5
4
0.85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm 2!0.8mm)1unit Conditions
1
2
3
Ratings 50 ± 10 0.45 1.8 0.8 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V Ratings min 50 10 ± 10 0.4 340 490 1.9 2.2 3.2 2.4 3 6.4 1.3 typ max Unit V µA µA V mS Ω Ω Ω
Marking : FJ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1501 TS IM TA-2465 No.7042-1/4
MCH6610
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=200mA VDS=10V, VGS=10V, ID=200mA VDS=10V, VGS=10V, ID=200mA IS=200mA, VGS=0 Ratings min typ 25 12 4.5 25 75 350 170 2.18 0.28 0.45 0.83 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=100mA RL=250Ω VOUT VDD=25V
Electrical Connection
D1 G2 S2
D
G
S1
G1
D2
P.G
50Ω
MCH6610
S
0.20
ID -- VDS
V 3.5
0.40 0.35
ID -- VGS
Ta= -2
75°C
0.18 0.16
3.0
4.0V
Drain Current, ID -- A
0.14
Drain Current, ID -- A
V
2.5
0.30 0.25 0.20 0.15 0.10 0.05 0
0.10 0.08 0.06 0.04 0.02 0 0 0.1
6.0
V
2.0
0.12
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
Ta= 75° C --2 5°C 25°C
1.5
25°C
2.0
V
VGS=1.5V
5°C
V
VDS=10V
2.5 IT00275
Drain-to-Source Voltage, VDS -- V
6
IT00274
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
VGS=4V
7
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
5
4
5
100mA
3
3
ID=50mA
2
Ta=75°C 25°C --25°C
2
1
0 0 1 2 3 4 5 6 7 8 9 10
1.0 0.01
2
3
5
7
0.1
2
3
5
Gate-to-Source Voltage, VGS -- V
IT00276
Drain Current, ID -- A
7 1.0 IT00277
No.7042-2/4
MCH6610
10
RDS(on) -- ID
VGS=2.5V
10
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
7
7
5
5
Ta=75°C
3
3
Ta=75°C 25°C
25°C --25°C
2
2
--25°C
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00278
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00279
Drain Current, ID -- A
4.5 4.0
Drain Current, ID -- A
1.0
RDS(on) -- Ta
Forward Transfer Admittance, yfs -- S
yfs -- ID
VDS=10V
7
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --60
I D=
A 50m
2. S= , VG
5V
5
10 I D=
0
, mA
0V =4. V GS
3
= Ta
--2
C 5°
°C 25
°C 75
2
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
5 3
0.1 0.01
2
3
5
7
0.1
2
3
5
7
1.0
IT00280 1000
IF -- VSD
VGS=0
Drain Current, ID -- A
IT00281
SW Time -- ID
t.