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MCH6609 Dataheets PDF



Part Number MCH6609
Manufacturers Sanyo
Logo Sanyo
Description Ultrahigh-Speed Switching Applications
Datasheet MCH6609 DatasheetMCH6609 Datasheet (PDF)

Ordering number : ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary Features • • • • Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. 0.25 2.1 1.6 [MCH6609] 0.3 0.15 4 5 6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Spe.

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Ordering number : ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary Features • • • • Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. 0.25 2.1 1.6 [MCH6609] 0.3 0.15 4 5 6 0.25 3 2 0.65 2.0 0.07 1 6 5 4 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2! 0.8mm)1unit Conditions 1 2 3 Ratings --50 ± 10 -0.28 --1.1 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--70mA ID=--70mA, VGS=-4V ID=--40mA, VGS=-2.5V ID=--10mA, VGS=-1.5V Ratings min --50 --10 ± 10 --0.4 170 240 5.1 6 10 6.6 8.4 20 --1.4 typ max Unit V µA µA V mS Ω Ω Ω Marking : FI Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1501 TS IM TA-2464 No.7041-1/4 MCH6609 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-140mA VDS=--10V, VGS=--10V, ID=-140mA VDS=--10V, VGS=--10V, ID=-140mA IS=--140mA, VGS=0 Ratings min typ 28 11 3.5 20 45 250 120 1.98 0.22 0.33 0.83 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --70mA RL=357Ω VOUT VDD= --25V Electrical Connection D1 G2 S2 D G S1 G1 D2 P.G 50Ω MCH6609 S V --0.14 ID -- VDS --4.0 --0.30 ID -- VGS VDS= --10V 25°C --2.5 --3.5 V --0.12 --3 . 0V 5V --0.25 Drain Current, ID -- A --0.10 Drain Current, ID -- A --0.20 --0.08 V --6. 0 --2 . 0V --0.15 --0.06 VGS= --1.5V --0.04 --0.10 --0.02 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --0.05 0 0 --0.5 --1.0 --1.5 --2.0 --3.0 IT00288 Drain-to-Source Voltage, VDS -- V 10 9 8 7 6 5 4 3 2 0 --1 --2 --3 --4 --5 --6 --7 --8 IT00287 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 10 RDS(on) -- ID Ta=75°C 25°C --25°C Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta= -- 25°C 75°C 2 --2. VGS= --4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 --70mA ID= --40mA 3 2 --9 --10 1 --0.01 2 3 5 7 --0.1 3 5 IT00290 Gate-to-Source Voltage, VGS -- V IT00289 Drain Current, ID -- A No.7041-2/4 MCH6609 100 7 RDS(on) -- ID VGS= --2.5V 100 7 RDS(on) -- ID VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 5 3 2 Ta=75°C 10 7 5 3 2 25°C 10 7 5 3 2 Ta=75°C 25°C --25°C --25°C 1.0 --0.01 2 3 5 7 --0.1 2 3 5 IT00291 1.0 --0.001 2 3 5 7 --0.01 2 3 5 IT00292 Drain Current, ID -- A 12 RDS(on) -- Ta Drain Current, ID -- A 1.0 yfs -- ID Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 8 6 4 , mA --40 4.0V = = -ID S , VG mA --70 = ID = -V GS 2 .5V Ta= 0.1 7 5 3 2 --25 °C C 25°C 75° 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature.


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