Document
Ordering number:ENN6461
N-Channel Silicon MOSFET
MCH6606
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting.
Package Dimensions
unit:mm 2173
[MCH6606]
0.25 0.3 6 5 4 1.6 2.1 0.15
1
2.0
0.25
2 3 0.65
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
0.15
0.85
Ratings 50 ±20 0.25 1 0.8 150 –55 to +150
Unit V V A A W ˚C ˚C
Mounted on a ceramic board (900mm2×0.8mm) 1unit
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=10V ID=30mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1 85 120 5.8 7.5 6.2 4.4 1.5 7.5 10.5 Conditions Ratings min 50 10 ±10 2.4 typ max Unit V µA µA V mS Ω Ω pF pF pF
Marking : FF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2461 No.6461-1/4
MCH6606
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0 Ratings min typ 10 11 105 75 1.40 0.21 0.34 0.85 1.2 max Unit ns ns ns ns nC nC nC V
Electrical Connection
Switching Time Test Circuit
VDD=25V
D1
G2
S2
10V 0V VIN VIN ID=50mA RL=500Ω
D
VOUT
PW=10µs D.C.≤1%
G
S1 G1 D2
P.G
50Ω
S
MCH6606
0.10
ID -- VDS
8.0 V
0.20 0.18
ID -- VGS
VDS=10V
6.
0V
0.08
Drain Current, ID – A
Drain Current, ID – A
Ta=-2
4.
3.0
V
0.16 0.14 0.12 0.10 0.08 0.06 0.04
.0V
0.06
0.04
2.5V
0.02
VGS=2.0V
0 0 0.2 0.4 0.6 0.8 1.0 IT00042
0.02 0 0 1 2 3 4 5 IT00043
Drain-to-Source Voltage, VDS – V
12 11
Gate-to-Source Voltage, VGS – V
100 7 5
RDS(on) -- VGS
Ta=25°C
RDS(on) -- ID
VGS=10V
Static Drain-to-Source On-State Resistance, RDS (on) – Ω
10 9 8 7 6 5 4 0 1 2 3 4 5 6 7 8 9 10
Static Drain-to-Source On-State Resistance, RDS (on) – Ω
3 2
ID=30mA
50mA
10 7 5 3 2
Ta=75°C 25°C --25°C
Gate-to-Source Voltage, VGS – V
1.0 0.01
2
3
5
7
75°C
10
25° C
2
5°C
0V
0.1
3
IT00044
Drain Current, ID – A
IT00045
No.6461-2/4
MCH6606
100 7
RDS(on) -- ID
VGS=4V
14
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS (on) – Ω
3 2
Static Drain-to-Source On-State Resistance, RDS (on) – Ω
5
12
10
10 7 5 3 2
Ta=75°C --25°C
8
6
4V S= G V V A, =10 30m GS V I D= , A 50m I D=
25°C
4
2 0 --60
1.0 0.01
2
3
5
7
Drain Current, ID – A
0.1
2
3
--40
--20
0
20
40
60
80
100
120
140
160
IT00046 5
Ambient Temperature, Ta – ˚C
IT00047
1.0
yfs -- ID
VDS=10V
IF -- VSD
VGS=0
Forward Transfer Admittance, | yfs | – S
7 5 3 2
3
0.1 7 5 3 2
2 Ta=--
5°C
Forward Current, IF – A
2
25°C
0.1 7 5 3
75°C
5°C
25°C
0.01 0.01
2
3
5
7
Drain Current, ID – A
0.1
2
3
0.01 0.4
0.5
0.6
Ta= 7
2
0.7
0.8
--25°C
0.9
1.0
1.1
1.2
IT00048 100 7 5 3 2
Diode Forward Voltage, VSD – V
IT00049
1000 7 5
SW Time -- ID
VDD=25V VGS=10V td(off) tf tr td(on)
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time – ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7
Ciss, Coss, Crss – pF
10 7 5 3 2 1.0 7 5 3 2 0.1 0 5 10 15 20
Ci.