Ultrahigh-Speed Switching Applications
Ordering number : ENN6901
MCH3412
N-Channel Silicon MOSFET
MCH3412
Ultrahigh-Speed Switching Applications
Features
• •...
Description
Ordering number : ENN6901
MCH3412
N-Channel Silicon MOSFET
MCH3412
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2167
[MCH3412]
0.25
0.3 0.15
Low ON-resinstance. Ultrahigh-speed switching. 4V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ± 20 3 12 1 150 --55 to +125 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A Ratings min 30 1 ± 10 1.2 2.1 3 2.6 typ max Unit V µA µA V S
Marking : KM
0.15
0.85
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SAN...
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