MCH3409

Ordering number : ENN6911 MCH3409 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2167 [MCH3409] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings 20 ± 10 2.0 8.0 0.9 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V Ratings min 20 1 ± 10 0.4 2.4 3.5 100 130 130 180 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : KJ 0.85 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or o...