Ultrahigh-Speed Switching Applications
Ordering number : ENN6863
MCH3310
P-Channel Silicon MOSFET
MCH3310
Ultrahigh-Speed Switching Applications
Features
• •...
Description
Ordering number : ENN6863
MCH3310
P-Channel Silicon MOSFET
MCH3310
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2167
[MCH3310]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
3
1.6 2.1
1
0.65 2.0
2
0.25
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.15
Specifications
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
Ratings -30 ± 20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C
Mounted on a ceramic board (900mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 ± 10 -1.2 1.0 1.5 210 360 185 30 20 270 500 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF
Marking : JK
0.85
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