MCH3306

Ordering number : ENN6900 MCH3306 P-Channel Silicon MOSFET MCH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2167 [MCH3306] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings -20 ± 10 --2 --8 1 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-1A ID=--1A, VGS=-4V ID=--0.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V Ratings min --20 --10 ± 10 -0.3 2.1 3.0 110 140 180 145 200 260 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : JF 0.85 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life...