IRFU410

IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17445. Features 1.5A, 500V rDS(ON) = 7.000Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds High Input Impedance 150oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFU410 IRFR410 PACKAGE TO-251AA TO-252AA BRAND IFU410 IFR410 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-401 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR410, IRFU410 Absolute Maximum Ratings TC = 25oC, Unless Otherwise...