MGFK35V4045

< X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=3.5W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=6.4dB (TYP.) @f=14.0 – 14.5GHz  High power added efficiency P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz APPLICATION  14.0 – 14.5 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.2A Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current 3500 IGR Reverse gate current -9 IGF Forward gate current 17 PT *1 Total power dissipation 33.3 Tch C...