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< X/Ku band internally matched power GaAs FET >
MGFK33V4045
14.0 – 14.5 GHz BAND / 2W
DESCRIPTION
The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system Flip-chip mounted High output power
P1dB=2.0W (TYP.) @f=14.0 – 14.5GHz High linear power gain
GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz High power added efficiency
P.A.E.=22% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
14.0 – 14.5 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=8V ID=700mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID Drain current
1800
IGR Reverse gate current
-5
IGF Forward gate current
10
PT *1 Total power dissipation
17
Tch Canne.