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MGFK33V4045 Dataheets PDF



Part Number MGFK33V4045
Manufacturers Mitsubishi
Logo Mitsubishi
Description power GaAs FET
Datasheet MGFK33V4045 DatasheetMGFK33V4045 Datasheet (PDF)

< X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=2.0W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz  High power added.

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< X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=2.0W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz  High power added efficiency P.A.E.=22% (TYP.) @f=14.0 – 14.5GHz APPLICATION  14.0 – 14.5 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=8V  ID=700mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current 1800 IGR Reverse gate current -5 IGF Forward gate current 10 PT *1 Total power dissipation 17 Tch Canne.


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