Ka-Band 3-Stage Self Bias Low Noise Amplifier
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICON...
Description
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5110
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) .
BLOCK DIAGRAM
Vd1 Vd2 Vd3
FEATURES
RF frequency : 37.0 to 40.0 GHz Super Low Noise NF=3.5dB (TYP.)
In
PHOTOGRAPH
Out
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Vd Drain bias voltage
Parameter
Id Drain bias current Vg Gate bias voltage Pin Maximum peak input power overdrive (Duration < 1sec) Ta Operating temperature range
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol
Fop
Gain Delta gain NF VSWR in VSWR out
P1dB
Output IP3
Vd Id Vg
Parameter
Test conditions
Operating frequency
range Small signal gain Small signal gain flatness Noise figure
On-wafer measurement
Input VSWR
Output VSWR
Output power at 1 dB
compression Output power at 3rdorder intercept point Drain bias vo...
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