MITSUBISHI SEMICONDUCTOR
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip OUTLINE DRAWING
DESCRIPTION
The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.
FEATURES (TARGET)
Low noise figure NFmin,=0. 5 dB (MAX. ) High associated gain Gs=12. 0 dB (MIN. ) @ f=12GHz
@ f=12GHz
APPLICATION
X to K band amplifiers.
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature...
MGFC4419G PDF File
