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MGFC42V7785A

Mitsubishi

C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC42V7785A 7.7 – 8.5 GHz BAND / 16W DESCRIPTION The MGFC42V7785A is an i...


Mitsubishi

MGFC42V7785A

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Description
< C band internally matched power GaAs FET > MGFC42V7785A 7.7 – 8.5 GHz BAND / 16W DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=7.7 – 8.5GHz  High power gain GLP=7.0dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency P.A.E.=28% (TYP.) @f=7.7 – 8.5GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=32.0dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 7.7 – 8.5 GHz band power amplifier  item 51 : 7.7 – 8.5 GHz band digital radio communication 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 QUALITY  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=4.5A Refer to Bias Procedure...




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