C band internally matched power GaAs FET
< C band internally matched power GaAs FET >
MGFC41V5964
5.9 – 6.4 GHz BAND / 12W
DESCRIPTION
The MGFC41V5964 is an inte...
Description
< C band internally matched power GaAs FET >
MGFC41V5964
5.9 – 6.4 GHz BAND / 12W
DESCRIPTION
The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=12W (TYP.) @f=5.9 – 6.4GHz High power gain
GLP=9.5dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency
P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=30dBm S.C.L.
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier
QUALITY
IG
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0.3
(1) 0.6+/-0.15
2MIN
R1.2
(2)
17.4+/-0.3 8.0+/-0.2
2MIN
(3) 20.4+/-0.2
13.4
0.1 2.4+/-0.2 15.8
4.0+/-0.4 1.4
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=3.4A RG=50ohm Refer to Bias Procedure
GF-18
(1): GATE (2): SOURCE (FLANGE)
(3):...
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