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MGFC39V3436

Mitsubishi

C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V3436 is a...


Mitsubishi

MGFC39V3436

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Description
< C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=3.4 – 3.6GHz  High power gain GLP=12.5dB (TYP.) @f=3.4 – 3.6GHz  High power added efficiency P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L APPLICATION  item 01 : 3.4 – 3.6 GHz band power amplifier  item 51 : 3.4 – 3.6 GHz band digital radio communication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 QUALITY  IG 12.0 0.2 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=2.4A  RG=50ohm Absolute ...




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