C band internally matched power GaAs FET
< C band internally matched power GaAs FET >
MGFC38V5964
5.9 – 6.4 GHz BAND / 6W
11.3
DESCRIPTION
The MGFC38V5964 is a...
Description
< C band internally matched power GaAs FET >
MGFC38V5964
5.9 – 6.4 GHz BAND / 6W
11.3
DESCRIPTION
The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=6W (TYP.) @f=5.9 – 6.4GHz High power gain
GLP=10dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency
P.A.E.=32% (TYP.) @f=5.9 – 6.4GHz Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=27dBm S.C.L.
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier item 51 : 5.9 – 6.4 GHz band digital radio communication
2MIN
12.9 +/-0.2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3 (1) 0.6 +/-0.15
(2) (2) R-1.6
(3) 10.7 17.0 +/-0.2
0.1 2.6 +/-0.2
4.5 +/-0.4 1.6
QUALITY
IG
12.0
0.2
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.8A RG=100ohm Refer to ...
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