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MGF1801BT

Mitsubishi

High-power GaAs FET


Description
< High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for micros...



Mitsubishi

MGF1801BT

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