MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=30dBm(TYP. ) @f=1. 9GHz,Pin=12dBm • High power gain Gp=19dB(TYP. ) @f=1. 9GHz • High power added efficiency ηadd=37%(TYP. ) @f=1. 9GHz,Pin=12dBm • Hermetic Package
APPLICATION
• For UHF Band power amplifiers
Fig. 1
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakd...
MGF0919A PDF File
