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MG200Q1ZS40

Part Number	MG200Q1ZS40
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Appl...
Datasheet	MG200Q1ZS40 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
5µs (max) trr = 0.
5µs (max) l Low saturation voltage : VCE (sat) = 4.
0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGE...

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