Silicon N Channel IGBT GTR Module
TOSHIBA GTR Module Silicon N Channel IGBT
MG200J2YS50
MG200J2YS50
High Power Switching Applications Motor Control Appl...
Description
TOSHIBA GTR Module Silicon N Channel IGBT
MG200J2YS50
MG200J2YS50
High Power Switching Applications Motor Control Applications
Unit: mm
l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A)
trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 200A)
Equivalent Circuit
JEDEC EIAJ TOSHIBA
― ― 2-95A1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg
VIsol
―
Rating
600 ±20 200 400 200 400 900 150 −40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
A
A
W °C °C V N·m
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, pl...
Similar Datasheet