MG120V2YS40

TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 High Power Switching Applications Motor Control Applications MG120V2YS40 Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 1.5µs (max) (IC = 120A) trr = 0.6µs (max) (IF = 120A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 430g (typ.) Rating 1700 ±20 120 240 120 240 1200 150 −40 ~ 125 4000 (AC 1 min.) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C1A 1 2001-08-16 MG120V2YS40 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance IGES ICES VGE (off) VCE (sat) Cies td(on) tr ton td(off) tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1700V, VGE = 0 IC = 120mA, VCE = 5V IC = 120A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Indu...