MG100Q2YS51

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 MG100Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 430g Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 150 / 100 300 / 200 100 200 660 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C4A 1 2001-04-16 MG100Q2YS51 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter Saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance IGES ICES VGE (off) VCE (sat) Cies td(on) tr ton td(off) tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 100mA, VCE = 5A IC = 100A, VGE = 15V...