MG100Q1JS40

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-108A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 1200 100 200 100 200 670 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A A W °C °C V N·m 1 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Reverse current Forward voltage Reverse recovery time Thermal resistance Transistor Diode Symbol IGES ICES VCES VGE (off) VCE (sat) Cies tr ton tf toff IR VF trr Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 1mA, VGE = 0 VCE = 5V , IC = 100mA IC = 100A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz VR = 1200V IF = 100A, VGE = 0 IF = 100A, VGE...