MG100J6ES50

TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 High Power Switching Applications Motor Control Applications MG100J6ES50 Unit: mm l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 505g (Typ.) ― ― 2-94A2A 000707EAA1 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, persona...