N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100J1BS11
MG100J1BS11
High Power Switching Applications Motor Control App...
Description
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100J1BS11
MG100J1BS11
High Power Switching Applications Motor Control Applications
Unit: mm
l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP PC Tj Tstg
VIsol
―
JEDEC JEITA TOSHIBA
Rating
600 ±20 100 200 300 150 −40 to 125 2500 (AC 1 Minute) 2/3
Unit V V
A
W °C °C V Nm
― ― 2-33F2A
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current Collector cut-off current Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Thermal resistance
Symbol
IGES ICES VGE(off) VCE(sat) Cies
tr ton tf toff Rth(j-c)
Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 VCE = 5V, IC = 100mA IC = 100A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
―
MG100J1BS11
Min Typ. Max Unit
― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V
― 2.3 2.7 V
― 8200 ―
pF
― 0.3 0.8
― 0.4 1.0 µs
― 0.6 1.0
― 1.0 1.6
― ― 0.41 °C / W
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MG100J1BS11
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MG100J1BS11
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MG100J1BS11
RESTRICTIONS ON PRODUCT USE
000707EAA
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