MF35

MF35 MF35 Fast Recovery Diode Replaces March 1998 version, DS4625-3.1 DSDS4625-4.0 January 2000 APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications FEATURES s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics KEY PARAMETERS VRRM 1200V IF(AV) 40A IFSM 400A Qr 10µC trr 0.2ns VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 1200 1000 800 600 Conditions MF35 - 1200 MF35 - 1000 MF35 - 800 MF35 - 600 VRSM = VRRM +100V Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF35-1200R. Outline type code: DO5. See Package Details for further information. CURRENT RATINGS Symbol IF(AV) IF(RMS) IF Parameter Mean forward current RMS value Continuous (direct) forward current Conditions Half sine wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC Max. 40 63 50 Units A A A 1/8 MF35 SURGE RATINGS Symbol IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; with VRRM ≤ 10V, Tj = 125oC 10ms half sine; Tj = 125oC Max. 400 800 Units A A2s THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 3.5Nm with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting torque -55 3.2 125 125 3.8 o Conditions Min. - Max. 0.8 0.2 125 Units ...