MF1011B900Y

DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 10 µs; δ = 1% f (GHz) 1.09 VCC (V) 50 PL (W) 800 Gp (dB) ≥6 ηC (%) ≥40 PINNING - SOT448A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol. WARNI...