MCTV35P60F1D

Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor (MCT) OLET S OBS Features 35A, -600V VTM = -1.35V (Max) at I = 35A and +150oC 800A Surge Current Capability 800A/µs di/dt Capability MOS Insulated Gate Control 50A Gate Turn-Off Capability at +150oC Anti-Parallel Diode A A K GR G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. This device features a discrete anti-parallel diode that shunts current around the MCT in the reverse direction without introducing carriers into the depletion region. PART NUMBER INFORMATION PART NUMBER MCTV35P60F1D PACKAGE TO-247 BRAND M35P60F1D Symbol G A K NOTE: When ordering, use the entire part number. Formerly developmental type TA9789 (MCT) and TA49054 (diode). Absolute Maximum Ratings ...